Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• substrate, i.e., surface photo-voltage (SPV) and gating effect (peak S). Figure 7b shows the photocurrent for structures of the same batch that underwent annealing procedure for a short period of 1 min at different temperatures. A large increase in intensity was observed by increased annealing temperature

High-resolution noncontact AFM and Kelvin probe force microscopy investigations of self-assembled photovoltaic donor–acceptor dyads

• Benjamin Grévin,
• Pierre-Olivier Schwartz,
• Laure Biniek,
• Martin Brinkmann,
• Nicolas Leclerc,
• Elena Zaborova and
• Stéphane Méry

Beilstein J. Nanotechnol. 2016, 7, 799–808, doi:10.3762/bjnano.7.71

• longer donor blocks essentially lead to standing acceptor–donor lamellae, where the acceptor and donor groups are π-stacked in an edge-on configuration. The existence of strong CPD and surface photo-voltage (SPV) contrasts shows that structural variations occur within the bulk of the edge-on stacks. SPV

• elementary building block level. Keywords: donor–acceptor co-oligomers; donor–acceptor lamellae; donor–acceptor-ordered bulk heterojunction; Kelvin probe force microscopy (KPFM); noncontact atomic force microscopy (nc-AFM); organic photovoltaics; surface photo-voltage (SPV); Introduction Nowadays, with

• simultaneously probe the nanostructure and the optoelectronic properties of organic and hybrid, photoactive thin films and devices [3][4][5][6][7][8][9]. Particularly, the local surface photo-voltage (SPV) of organic blends [3][4][6][7] can be mapped in KPFM by analysing the surface potential (or contact

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• measurement of the surface photo voltage (SPV) in dependence on the wavelength and light intensity via measuring of the contact potential difference (CPD) values in the dark as well as under illumination [25]. In the second part we present several studies highlighting the potential of the novel instrument

• , adjusting the reflected light beam into the centre of the PSD. The AFM performs best when all four segments of the PSD are equally illuminated. Surface photo voltage (SPV) effects enable the analysis of opto-electric sample properties and allows to minimize band bending effects at the surface of a

• this picture of a strongly defect and adsorbate-influenced Fermi-level pinning of the SiC surface. A well-known technique to address and quantify the influence of surface defects in semiconductors are surface photo voltage (SPV) measurements. Charge carriers are excited by an incident photon flux and